* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switch
HGTG20N60B3 Datasheet (420.81 KB)
HGTG20N60B3
420.81 KB
N-channel igbt.
UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best fea.
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