of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st.

operating at moderate frequencies where low conduction losses are essential. Formerly Developmental Type TA49182. Featu.

HGTP12N60C3

HGTP12N60A4

HGTP12N60A4D

HGTP12N60B3

HGTP12N60B3D

HGTP12N60D1

HGTP10N120BN

HGTP10N40C1

HGTP10N40C1D

HGTP10N40E1

HGTP10N40E1D

HGTP10N40F1D

HGTP10N50C1