HUF75639S3S Datasheet | Fairchild Semiconductor

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet October 2013 N-Channel Ultra FET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative Ultra FET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75639. Ordering Information PART NUMBER HUF75639G3 HUF75639P3 HUF75639S3ST HUF75639S3 PACKAGE TO-247 TO-220AB TO-263AB TO-262AA BRAND 75639G 75639P 75639S 75639S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN...