* 8A, 500V
* rDS(ON) = 0.850Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for
IRF840
Fairchild Semiconductor
93.27 KB
500v n-channel mosfet.
Data Sheet January 2002 IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transisto.
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