IRF840 Datasheet | Specifications & PDF Download

Advanced Power Electronics Corp. IRF840P-HF-3 N-channel Enhancement-mode Power MOSFET Ease of Paralleling Simple Drive Requirement Fast Switching Pe

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IRF840 RoHS-compliant Product Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-

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® IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET TYPE IRF840 s s s s s V DSS 500 V R DS(on) < 0.85 Ω ID 8 A TYPICAL RDS(on) = 0

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www.vishay.com IRF840, SiHF840 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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$GYDQFHG 3RZHU 026)(7 IRF840S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Volt

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www.vishay.com IRF840 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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IRF840 Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D G N Channel S Symbol ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stat

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SEMICONDUCTOR IRF840 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (8A, 500Volts) DESCRIPTION The Nell IRF840 are N-Channel enhan

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IRF840A Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Drain D Gate Drain Source N Channel G Symbol S ELECTRICAL CHARACTERISICS at T

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Power MOSFET IRF840A, SiHF840A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V

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IRF840PBF ® IRF840PBF Pb Free Plating Product Pb 8.8A,500V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.85 Ω )@VGS=10V ■ Gate C

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Fast Sw

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PD- 91900A SMPS MOSFET IRF840A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed po

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IRF840 Data Sheet July 1999 File Number 2312.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field ef

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Data Sheet January 2002 IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transisto

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SEMICONDUCTORS IRF840 N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE N channel in a plastic TO220 package. They are intended for use in off

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• Lead-Free PD - 94882 IRF840PbF www.irf.com Document Number: 91070 1 12/10/0 www.vishay.com 1 IRF840PbF Document Number: 91070 www.vishay.com 2

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