IRF840 Datasheet | Specifications & PDF Download

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Fast Sw

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www.vishay.com IRF840LC Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg

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IRF840 RoHS-compliant Product Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G N-

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www.vishay.com IRF840 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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SEMICONDUCTOR IRF840 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (8A, 500Volts) DESCRIPTION The Nell IRF840 are N-Channel enhan

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF840 ·FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Volt

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL www.vishay.com Vishay Siliconix Power MOSFET I2PAK (TO-262) D2PAK (TO-263) D G SD G D G S S N

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® IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET TYPE IRF840 s s s s s V DSS 500 V R DS(on) < 0.85 Ω ID 8 A TYPICAL RDS(on) = 0

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IRF440-443/IRF840-843 MTM7N45/7N50 N-Channel Power MOSFETs 8A, 450V/500V Description These devices are n-channel, enhancement mode, power MOSFETs des

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PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced

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www.vishay.com IRF840HPBF Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200505 Issued Date : 2005.06.01 Revised Date : 2005.06.08 Page No. : 1/4 HIRF840 / HIRF840F N-CHA

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IRF840AS/AL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A Mechanical Dimensions Case SMB 220 Plastic DIMENSIONS Millimetres Inches Dim

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IRF840B/IRFS840B February 2005 IRF840B/IRFS840B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect trans

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SEMICONDUCTOR IRF840 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (8A, 500Volts) DESCRIPTION The Nell IRF840 are N-Channel enhan

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Power MOSFET IRF840A, SiHF840A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V

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IRF840 Data Sheet July 1999 File Number 2312.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field ef

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Data Sheet January 2002 IRF840 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transisto

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PD-95136 IRF840SPbF • Lead-Free D2Pak www.DataSheet4U.com www.irf.com 1 05/10/04 IRF840SPbF 2 www.irf.com IRF840SPbF www.irf.com 3 IRF840S

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