IRFI840B Datasheet - Fairchild Semiconductor

500V N-Channel MOSFET

IRFI840B Features

* 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !

* ◀ ▲

* G S D2-PAK IRFW Series G D S I2-PAK IRFI S

IRFI840B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFI840B Datasheet (695.12 KB)

IRFI840B Datasheet Preview — Preview of IRFI840B PDF

Datasheet Details

Part number:

IRFI840B

Manufacturer:

Fairchild Semiconductor

File Size:

695.12 KB

Description:

500v n-channel mosfet.

📁 Related Datasheet

IRFI840A Advanced Power MOSFET (Fairchild Semiconductor)

IRFI840G Power MOSFET (International Rectifier)

IRFI840G Power MOSFET (Vishay)

IRFI840GLC Power MOSFET (International Rectifier)

IRFI840GLC Power MOSFET (Vishay)

IRFI840GLCPBF HEXFET Power MOSFET (International Rectifier)

IRFI840GPBF Power MOSFET (International Rectifier)

IRFI820 HEXFET Power MOSFET (International Rectifier)

IRFI820A Advanced Power MOSFET (Fairchild Semiconductor)

IRFI820B 500V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRFI840B 500V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFI840B Features

IRFI840B General Description

Datasheet Details

File Size:

Description:

IRFI840B Distributor