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IRFM220A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ. ) IRFM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt www. DataSheet4U. com Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 oC ) Continuous Drain Current (TA=70.

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Datasheet Details

Part number IRFM220A
Manufacturer Fairchild Semiconductor
File Size 310.97 KB
Description Advanced Power MOSFET
Datasheet download datasheet IRFM220A Datasheet
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.626 Ω (Typ.) IRFM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt www.DataSheet4U.
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