| Description | www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRFW/I550A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Sour... |
| Features |
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.)
Ο
IRFW/I550A
BVDSS = 100 V RDS(on) = 0.04 Ω ID = 40 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source...
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| Datasheet |
 IRFW550A Datasheet - 292.98KB |
