IRFW644B Datasheet | Fairchild Semiconductor

IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. Features - - - - - - 14A, 250V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 47 n C) Low Crss ( typical 30 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G S D2-PAK IRFW Series I2-PAK IRFI...