IRFW710B mosfet equivalent, 400v n-channel mosfet.
* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
* Low gate charge ( typical 7.7 nC)
* Low Crss ( typical 6.0 pF)
* Fast switching
* 100% avalanche tested
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.
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