IRFW710B Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
- Low gate charge ( typical 7.7 nC)
- Low Crss ( typical 6.0 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series
