IRFW710B
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features
- 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
- Low gate charge ( typical 7.7 n C)
- Low Crss ( typical 6.0 p F)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D2-PAK
IRFW Series
I2-PAK
IRFI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed...
