Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
Features
- 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V.
- Low gate charge ( typical 7.7 nC).
- Low Crss ( typical 6.0 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability
D
GS
D2-PAK
IRFW Series
GDS
I2-PAK
IRFI Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, Tstg TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain C.
IRFW710B Datasheet
