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IRFW710S - Power MOSFET

Product Overview

Fairchild Semiconductor

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IRFW710S Power MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – IRFW710S

Datasheet Details

Part number	IRFW710S
Manufacturer	Fairchild Semiconductor
File Size	224.05 KB
Description	Power MOSFET
Datasheet	IRFW710S Datasheet
Additional preview pages of the IRFW710S datasheet.

Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Low RDS(ON): 2.815Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1).

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Published: Aug 3, 2016 |