IRFW710S Overview
Key Features
- Avalanche Rugged Technology
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 400V
- Low RDS(ON): 2.815Ω (Typ.)
| Part | IRFW710S |
|---|---|
| Description | Power MOSFET |
| Category | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Size | 224.05 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |