Datasheet Summary
IRFW710B / IRFI710B
November 2001
IRFW710B / IRFI710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
Features
- 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
- Low gate charge ( typical 7.7 nC)
- Low Crss ( typical 6.0 pF)
- Fast switching
- 100%...