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IRFW710A - Power MOSFET

Download the IRFW710A datasheet PDF. This datasheet also covers the IRFI710A variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
  • Low RDS(ON): 2.815Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI710A-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFW720A Power MOSFET Samsung
IRFW730A Power MOSFET Samsung
IRFW450 N-Channel MOSFET Transistor Inchange Semiconductor
IRFW610A Power MOSFET Samsung
IRFW630A Power MOSFET Samsung

Other Datasheets by Fairchild (now onsemi)

Part Number Description
IRFW710B 400V N-Channel MOSFET
IRFW710S Power MOSFET
IRFW720B 400V N-Channel MOSFET
IRFW720S Power MOSFET
IRFW730B 400V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
$GYDQFHG 3RZHU 026)(7 IRFW/I710A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.