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IRFW740B - 400V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V.
  • Low gate charge ( typical 41 nC).
  • Low Crss ( typical 35 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Cur.

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Datasheet Details

Part number IRFW740B
Manufacturer Fairchild Semiconductor
File Size 676.01 KB
Description 400V N-Channel MOSFET
Datasheet download datasheet IRFW740B Datasheet
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IRFW740B / IRFI740B November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • 10A, 400V, RDS(on) = 0.
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