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IRFW820A - Advanced Power MOSFET

Download the IRFW820A datasheet PDF. This datasheet also covers the IRFI820A variant, as both devices belong to the same advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 10µA (Max. ) @ VDS = 500V.
  • Lower RDS(ON): 2.000Ω (Typ. ) IRFW/I820A BVDSS = 500 V RDS(on) = 3.0Ω ID = 2.5 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Conti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRFI820A_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRFW830A Power MOSFET Samsung
IRFW450 N-Channel MOSFET Transistor Inchange Semiconductor
IRFW610A Power MOSFET Samsung
IRFW630A Power MOSFET Samsung
IRFW630B N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRFW520A Advanced Power MOSFET
IRFW530A Advanced Power MOSFET
IRFW540A Advanced Power MOSFET
IRFW550A (IRFI550A / IRFW550A) Advanced Power MOSFET
IRFW610B N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 2.000Ω (Typ.) IRFW/I820A BVDSS = 500 V RDS(on) = 3.0Ω ID = 2.5 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.
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