IRLS620A - Advanced Power MOSFET

Features

• ! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max. ) @ VDS = 200V ! Lower RDS(ON) : 0.609Ω (Typ. ) IRLS620A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 4.1 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃).