Datasheet Summary
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Advanced Power MOSFET
Features
! Logic-Level Gate Drive ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 0.335Ω (Typ.)
BVDSS = 200 V RDS(on) = 0.4 Ω ID = 6.5 A
TO-220F
1.Gate 2. Drain 3....