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KSD1691
KSD1691
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current • High Power Dissipation: PC = 1.3W (Ta=25°C) • Complementary to KSB1151
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 60 60 7 5 8 1 1.
KSD1691 Datasheet
