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Fairchild Semiconductor Electronic Components Datasheet

KSD1691 Datasheet

NPN Epitaxial Silicon Transistor

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KSD1691
Feature
• Low Collector-Emtter Saturation Voltage & Large Collector Current
• High Power Dissipation: PC = 1.3W (Ta=25°C)
• Complementary to KSB1151
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP *Collector Current (Pulse)
IB Base Current (DC)
PC Collector Dissipation (Ta=25°C)
PC Collector Dissipation (TC=25°C)
TJ Junction Temperature
TSTG
Storage Temperature
* PW10ms, duty Cycle50%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE1
hFE2
hFE3
*DC Current Gain
VCE(sat)
*Collector-Emitter Saturation Voltage
VBE(sat)
*Base-Emitter Saturation Voltage
tON Turn ON Time
tSTG
Storage Time
tF Fall Time
* Pulse test: PW50µs, duty Cycle2% Pulsed
VCB = 50V, IE = 0
VEB = 7V, IC = 0
VCE = 1V, IC = 0.1A
VCE = 1V, IC = 2A
VCE = 1V, IC = 5A
IC = 2A, IB = 0.2A
IC = 2A, IB = 0.2A
VCC = 10V, IC = 2A
IB1 = - IB2 = 0.2A
RL = 5
hFE Classificntion
Classification
hFE 2
O
100 ~ 200
Y
160 ~ 320
Value
60
60
7
5
8
1
1.3
20
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
W
°C
°C
Min.
60
100
50
Typ.
0.1
0.9
0.2
1.1
0.2
Max.
10
10
Units
µA
µA
400
0.3 V
1.2 V
1 µs
2.5 µs
1 µs
G
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000


Fairchild Semiconductor Electronic Components Datasheet

KSD1691 Datasheet

NPN Epitaxial Silicon Transistor

No Preview Available !

Typical Characteristics
10
8
IB = 100mA IB = 80mA
IB = 60mA
6 IB = 40mA
IB = 30mA
4 IB = 20mA
IB = 10mA
2
IB = 0
0
0.4 0.8 1.2 1.6 2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
1000
100
VCE = 2V
VCE = 1V
10
1
0.01
0.1
1
IC[A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
10
Ic = 10 IB
1 VBE(sat)
0.1
10
Ic(Pulse)MAX
Ic(DC)MAX
1
2mS
0.01
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
8
6
4
2
0
20 40 60 80 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Reverse Bias Safe Operating Area
©2000 Fairchild Semiconductor International
0.1
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 4. Forward Bias Safe Operating Area
160
140
120
100
80
60
40
20
0
0
sD/bISLSIIMPAITTEIODN LIMITED
25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 6. Derating Curve of Safe Operating Areas
Rev. A, February 2000


Part Number KSD1691
Description NPN Epitaxial Silicon Transistor
Maker Fairchild Semiconductor
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KSD1691 Datasheet PDF





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