KSE180 Datasheet | Fairchild Semiconductor

KSE180/181/182 KSE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSE180 : KSE181 : KSE182 1. Emitter Value 60 80 100 40 60 80 7 3 6 1 1.5 12.5 150 - 65 ~ 150 Units V V V V V V V A A A W W °C °C VCEO Collector-Emitter Voltage : KSE180 : KSE181 : KSE182 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature VEBO IC ICP IB PC TJ TSTG Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector -Emitter Breakdown Voltage : KSE180 : KSE181 : KSE182 Collector Cut-off Current : KSE180 : KSE181 : KSE182 : KSE180 : KSE181 : KSE182 Emitter Cut-off Current DC Current Gain Test Condition IC = 10m A, IB = 0 Min. 40 60 80 0.1 0.1 0.1 0.1 0.1 0.1 0.1 50 30 12 250 Max. Units V V V µA µA µA m A m A m A µA ICBO VCB = 60V, IB = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCB = 60V, IE = 0 @ TC = 150°C VCB = 80V, IE = 0 @ TC = 150°C VCB = 100V, IE = 0 @ TC = 150°C VBE = 7V, IC = 0 VCE = 1V, IC = 100m A VCE = 1V, IC = 500m A VCE = 1V, IC = 1.5A IC = 500m A, IB = 50m A IC = 1.5A, IB = 150m A IC = 3A, IB = 600m A IC = 1.5A, IB = 150m A IC = 3A, IB = 600m A VCE = 1V, IC = 500m A VCE = 10V, IC = 100m A VCB = 10V, IE = 0, f = 0.1MHz 50 IEBO h FE VCE(sat) Collector-Emitter Saturation Voltage 0.3 0.9 1.7 1.5 2.0 1.2 30 V V V V V V MHz p F VBE(sat) VBE(on) f T Cob Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE180/181/182 Typical Characteristics IB=200m A IC[A], COLLECTOR CURRENT 4 h FE, DC CURRENT GAIN IB = 180m A IB = 160m A IB = 140m A IB = 120m A IB = 100m A IB = 80m A IB = 60m A IB = 40m A IB = 20m...