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RFD14N05 - 14A/ 50V/ 0.100 Ohm/ N-Channel Power MOSFETs

Features

  • 14A, 50V.
  • rDS(ON) = 0.100Ω.
  • Temperature Compensating PSPICE ® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175o C Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFD14N05 RFD1 4N05SM RFP14N05.

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Full PDF Text Transcription

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RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09770. Features • 14A, 50V • rDS(ON) = 0.
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