datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Fairchild Semiconductor Electronic Components Datasheet

RFP45N06 Datasheet

45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

No Preview Available !

RFP45N06 pdf
SEMICONDUCTOR
RFG45N06, RFP45N06,
RF1S45N06, RF1S45N06SM
December 1995
45A, 60V, Avalanche Rated N-Channel
Enhancement-Mode Power MOSFETs
Features
• 45A, 60V
• rDS(ON) = 0.028
Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175oC Operating Temperature
Description
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
N-Channel power MOSFETs are manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI integrated circuits gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switch-
ing regulators, switching converters, motor drivers, relay
drivers and emitter switches for bipolar transistors. These
transistors can be operated directly from integrated circuits.
PACKAGE AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RFG45N06
TO-247
RFG45N06
RFP45N06
TO-220AB
RFP45N06
RF1S45N06
TO-262AA
F1S45N06
RF1S45N06SM
TO-263AB
F1S45N06
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A.
Formerly developmental type TA49028.
Packages
DRAIN
(BOTTOM
SIDE METAL)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
Symbol
D
G
GATE
SOURCE
MA
DRAIN
(FLANGE)
S
Absolute Maximum Ratings TC = +25oC
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IAM
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
RFG45N06, RFP45N06
RF1S45N06, RF1S45N06SM
60
60
±20
45
Refer to Peak Current Curve
Refer to UIS Curve
125
131
0.877
-55 to +175
UNITS
V
V
V
A
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright © Harris Corporation 1995
3-33
File Number 3574.2


Fairchild Semiconductor Electronic Components Datasheet

RFP45N06 Datasheet

45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

No Preview Available !

RFP45N06 pdf
Specifications RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
tD(ON)
tR
tD(OFF)
tF
tOFF
QG(TOT)
QG(10)
QG(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 60V,
VGS = 0V
TC = +25oC
TC = +150oC
VGS = ±20V
ID = 45A, VGS = 10V
VDD = 30V, ID = 45A
RL = 0.667, VGS = +10V
RGS = 3.6
VGS = 0 to 20V
VGS = 0 to 10V
VDD = 48V,
ID = 45A,
RL = 1.07
VGS = 0 to 2V
VDS = 25V, VGS = 0V
f = 1MHz
MIN TYP MAX UNITS
60 -
-
V
2-4
V
- - 1 µA
- - 50 µA
- - 100 nA
- - 0.028
- - 120 ns
- 12 -
ns
- 74 -
ns
- 37 -
ns
- 16 -
ns
- - 80 ns
- 125 150 nC
- 67 80 nC
- 3.7 4.5 nC
- 2050 -
pF
- 600 -
pF
- 200 -
pF
-
-
1.14
oC/W
- - 80 oC/W
Source-Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
Reverse Recovery Time
VSD ISD = 45A
tRR ISD = 45A, dISD/dt = 100A/µs
-
-
- 1.5 V
- 125 ns
3-34


Part Number RFP45N06
Description 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Maker Fairchild Semiconductor
Total Page 6 Pages
PDF Download
RFP45N06 pdf
RFP45N06 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 RFP45N02L 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs Intersil Corporation
Intersil Corporation
RFP45N02L pdf
2 RFP45N03L 45A/ 30V/ 0.022 Ohm/ Logic Level/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP45N03L pdf
3 RFP45N06 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor
RFP45N06 pdf
4 RFP45N06 45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP45N06 pdf
5 RFP45N06LE 45A/ 60V/ 0.028 Ohm/ Logic Level N-Channel Power MOSFETs Intersil Corporation
Intersil Corporation
RFP45N06LE pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy