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Intersil Electronic Components Datasheet

RFP45N02L Datasheet

45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs

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RFP45N02L pdf
May 1997
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
Features
• 45A, 20V
• rDS(ON) = 0.022
Temperature Compensating PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from inte-
grated circuits.
Formerly developmental type TA49243.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP45N02L
TO-220AB
FP45N02L
RF1S45N02L
TO-262AA
F45N02L
RF1S45N02LSM
TO-263AB
F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Symbol
D
G
S
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
GATE
SOURCE
MA
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1
File Number 4342


Intersil Electronic Components Datasheet

RFP45N02L Datasheet

45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs

No Preview Available !

RFP45N02L pdf
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
RFP45N02L, RF1S45N02L,
RF1S45N02LSM
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
20
V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
20
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±10
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
45
Refer to Peak Current Curve
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Refer to UIS Curve
Power Dissipation . . . .
Derate Above 25oC.
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.PD
...
90
0.606
W
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
-55 to 175
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = 20V,
VGS = 0V
TC = 25oC
TC = 150oC
VGS = ±10V
ID = 45A, VGS = 5V
VDD = 15V, ID 45A,
RL = 0.33, VGS = 5V,
RGS = 5
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 16V,
ID 45A,
RL = 0.35
VDS = 15V, VGS = 0V,
f = 1MHz
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
Reverse Recovery Time
VSD
ISD = 45A
trr ISD = 45A, dISD/dt = 100A/µs
MIN TYP MAX UNITS
20 - - V
1 - 2V
- - 1 µA
- - 50 µA
-
-
±100
nA
-
-
0.022
- - 260 ns
- 15 - ns
- 160 -
ns
- 20 - ns
- 20 - ns
- - 60 ns
- 50 60 nC
- 30 36 nC
- 1.5 1.8 nC
- 1300 -
pF
- 724 -
pF
- 250 -
pF
- - 1.65 oC/W
- - 80 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
2


Part Number RFP45N02L
Description 45A/ 20V/ 0.022 Ohm/ N-Channel Logic Level Power MOSFETs
Maker Intersil Corporation
Total Page 8 Pages
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RFP45N02L pdf
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