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Intersil Electronic Components Datasheet

RFP42N03L Datasheet

42A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFET

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RFP42N03L pdf
Data Sheet
RFP42N03L, RF1S42N03LSM
July 1999 File Number 4302.2
42A, 30V, 0.025 Ohm, Logic Level,
N-Channel Power MOSFET
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49030.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP42N03L
TO-220AB
FP42N03L
RF1S42N03LSM TO-263AB
F42N03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S42N03LSM9A.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 42A, 30V
• rDS(ON) = 0.025
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
6-267
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

RFP42N03L Datasheet

42A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFET

No Preview Available !

RFP42N03L pdf
RFP42N03L, RF1S42N03LSM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
RFP42N03L, RF1S42N03LSM
30
30
±10
42
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
SYMBOL
TEST CONDITIONS
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC
VGS = ±10V
ID = 42A, VGS = 5V (Figure 11)
VDD = 15V, ID 42A, RL = 0.357,
VGS = 5V, RGS = 5
(Figures 10, 18, 19)
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 24V, ID 42A,
RL = 0.571
IG(REF) = 0.6mA
(Figures 15, 20, 21)
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
Source to Drain Diode Specifications
MIN TYP MAX UNITS
30 -
-
V
1-2
V
- - 1 µA
- - 25 µA
- - ±100 nA
- - 0.025
- - 260 ns
- 15 -
ns
- 160 -
ns
- 20 -
ns
- 20 -
ns
- - 60 ns
- 50 60 nC
- 30 36 nC
- 1.5 1.8 nC
- 1650 -
pF
- 575 -
pF
- 200 -
pF
- - 1.65 oC/W
- - 80 oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Source to Drain Diode Voltage
VSD
ISD = 42A
--
Diode Reverse Recovery Time
trr ISD = 42A, dISD/dt = 100A/µs
--
NOTES:
2. Pulse test: pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
MAX
1.5
125
UNITS
V
ns
6-268


Part Number RFP42N03L
Description 42A/ 30V/ 0.025 Ohm/ Logic Level/ N-Channel Power MOSFET
Maker Intersil Corporation
Total Page 8 Pages
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