SFU9214 Datasheet PDF (Advanced Power MOSFET) | Download Fairchild Semiconductor SFU9214

SFU9214 - Advanced Power MOSFET

Features

ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max. ) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ. ) SFR/U9214 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.53 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Cur.

Datasheet Details

Part number	SFU9214
Manufacturer	Fairchild Semiconductor
File Size	309.66 KB
Description	Advanced Power MOSFET
Datasheet	SFU9214 Datasheet
Additional preview pages of the SFU9214 datasheet.

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Full PDF Text Transcription

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Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Lower RDS(ON) : 3.15 Ω (Typ.) SFR/U9214 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.53 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -250 -1.53 -0.

Published: May 20, 2005 |