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Fairchild Semiconductor Electronic Components Datasheet

SS9015 Datasheet

NPN Epitaxial Silicon Transistor To-92

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SS9015
Low Frequency, Low Noise Amplifier
• Complement to SS9014
1 TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Ratings
-50
-45
-5
-100
450
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
Cob
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Base Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
IC = -100µA, IE =0
IC = -1mA, IB =0
IE = -100µA, IC =0
VCB = -50V, IE =0
VEB = -5V, IC =0
VCE = -5V, IC = -1mA
IC = -100mA, IB = -5mA
IC = -100mA, IB = -5mA
VCE = -5V, IC = -2mA
VCB = -10V, IE =0
f=1MHz
fT
Current Gain Bandwidth Product
VCE = -5V, IC = -10mA
NF Noise Figure
VCE = -5V, IC = -0.2mA
f=1KHz, RS=1K
Min.
-50
-45
-5
60
-0.6
100
Typ.
4.5
190
0.7
Max.
-50
-50
1000
-0.7
-1.0
-0.75
7.0
Units
V
V
V
nA
nA
V
V
pF
MHz
10 dB
hFE Classification
Classification
hFE
A
60 ~ 150
B
100 ~ 300
C
200 ~ 600
D
400 ~ 1000
©2002 Fairchild Semiconductor Corporation
Rev. B2, November 2002


Fairchild Semiconductor Electronic Components Datasheet

SS9015 Datasheet

NPN Epitaxial Silicon Transistor To-92

No Preview Available !

Typical Characteristics
-50
I
B
=
-400µA
-40
I
B
=
-350µA
I
B
=
-300µA
-30 IB = -250µA
IB = -200µA
-20 IB = -150µA
I
B
=
-100µA
-10
IB = -50µA
-0
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-1000
VBE (sat)
-100
VCE (sat)
IC = 20 IB
-10
-0.1 -1 -10 -100
IC [mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f = 1 MHz
IE = 0
10
-1000
-100
VCE = -5V
-10
-0.1
-1 -10 -100
IC [mA], COLLECTOR CURRENT
Figure 2. DC current Gain
-1000
-100
VCE = -5V
-10
-1
-0.1
-0.0
-0.2 -0.4 -0.6 -0.8 -1.0
VBE [V], BASE-EMITTER VOLTAGE
-1.2
Figure 4. Base-Emitter On Voltage
1000
VCE = -6V
100
1
-1 -10 -100
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
10
-1
-10
IC [mA], COLLECTOR CURRENT
Figure 6. Current Gian Bandwidth Product
Rev. B2, November 2002


Part Number SS9015
Description NPN Epitaxial Silicon Transistor To-92
Maker Fairchild Semiconductor
Total Page 4 Pages
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