Datasheet4U Logo Datasheet4U.com

SSI2N80A Datasheet - Fairchild Semiconductor

Advanced Power MOSFET

SSI2N80A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ.) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.

SSI2N80A Datasheet (290.05 KB)

Preview of SSI2N80A PDF

Datasheet Details

Part number:

SSI2N80A

Manufacturer:

Fairchild Semiconductor

File Size:

290.05 KB

Description:

Advanced power mosfet.

📁 Related Datasheet

SSI2N60B N-Channel MOSFET (Fairchild Semiconductor)

SSI2007 Power MOSFET (SeCoS)

SSI204 LOW POWER DTMF RECEIVER (Silicon Systems)

SSI2085E-C N & P-Ch Enhancement Mode Power MOSFET (SeCoS)

SSI20N5E-C Dual N-Ch Enhancement Mode Power MOSFET (SeCoS)

SSI2154 800mA 20V Dual N-Channel MOSFET (SeCoS Halbleitertechnologie)

SSI263A Phoneme Speech synthesizer (Silicon Systems)

SSI10N60B 600V N-Channel MOSFET (Fairchild Semiconductor)

SSI122 4-Channel Thin Film Read/Write Device (Silicon Systems)

SSI1N50B 520V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

SSI2N80A Advanced Power MOSFET Fairchild Semiconductor

Image Gallery

SSI2N80A Datasheet Preview Page 2 SSI2N80A Datasheet Preview Page 3

SSI2N80A Distributor