SSI4N60B Key Features
- 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% av
- Part: SSI4N60B
- Manufacturer: Fairchild (official site)
- Size: 668.85 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| SSI10N60B | 600V N-Channel MOSFET |
| SSI1N50B | 520V N-Channel MOSFET |
| SSI1N60A | Advanced Power MOSFET |
| SSI1N60B | 600V N-Channel MOSFET |
| SSI2N60B | N-Channel MOSFET |
SSI4N60B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supplies.