SSP45N20B Key Features
- 35A, 200V, RDS(on) = 0.065Ω @VGS = 10 V Low gate charge ( typical 133 nC) Low Crss ( typical 120 pF) Fast switching 100%
- Part: SSP45N20B
- Manufacturer: Fairchild (official site)
- Size: 952.01 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| SSP45N20A | advanced power MOSFET |
| SSP4N60AS | Advanced Power MOFET |
| SSP4N60B | 600V N-Channel MOSFET |
| SSP4N80A | Advanced Power MOSFET |
| SSP4N80AS | Advanced Power MOSFET |
SSP45N20B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, .. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC...