SSR4N60B - N-Channel MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	SSR4N60B
Manufacturer	Fairchild (now onsemi)
File Size	664.43 KB
Description	N-Channel MOSFET
Datasheet	SSR4N60B Datasheet

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Overview

www.DataSheet4U.com SSR4N60B / SSU4N60B November 2001 SSR4N60B / SSU4N60B 600V N-Channel.

Key Features

2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D-PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C).

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