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Fairchild Semiconductor Electronic Components Datasheet

Si4420DY Datasheet

Single N-Channel MOSFET

No Preview Available !

January 2000
Si4420DY*
Single N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
This device is well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• Battery switch
• Load switch
• Motor controls
Features
• 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 V
RDS(ON) = 0.013 W @ VGS = 4.5 V
• Low gate charge.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
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Si4420DY Rev. B


Fairchild Semiconductor Electronic Components Datasheet

Si4420DY Datasheet

Single N-Channel MOSFET

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Notes:
1: RqJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RqJC is guaranteed by design while RqCA is determined by the user's board design.
6
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a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W on a minimum
mounting pad.
Si4420DY Rev. B


Part Number Si4420DY
Description Single N-Channel MOSFET
Maker Fairchild Semiconductor
PDF Download

Si4420DY Datasheet PDF






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