TIP142T Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum)
- Industrial Use
- plement to TIP147T
| Manufacturer | Part Number | Description |
|---|---|---|
Continental Device India |
TIP142T | SILICON PLANAR POWER DARLINGTON TRANSISTORS |
Transys |
TIP142T | SILICON PLANAR POWER DARLINGTON TRANSISTORS |
STMicroelectronics |
TIP142T | Complementary power Darlington transistors |
Inchange Semiconductor |
TIP142T | NPN Transistor |
SEMIHOW |
TIP142T | PNP Epitaxial Silicon Darlington Transistor |