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TIP142T - NPN Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum).
  • Industrial Use.
  • Complement to TIP147T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP142T TIP142TTU Top Mark TIP142T TIP142T Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses exceed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIP142T — NPN Epitaxial Silicon Darlington Transistor November 2014 TIP142T NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum) • Industrial Use • Complement to TIP147T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP142T TIP142TTU Top Mark TIP142T TIP142T Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.