FPD750
FEATURES
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- 27.5 d Bm Linear Output Power at 12 GHz 11.5 d B Power Gain at 12 GHz 14.5 d B Max Stable Gain at 12 GHz 38 d Bm Output IP3 50% Power-Added Efficiency
Datasheet v3.0
LAYOUT:
GENERAL DESCRIPTION
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The .. FPD750 is an Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features
Si3N4 passivation and is available in the low cost plastic SOT89 SOT343 and DFN packages.
TYPICAL APPLICATIONS:
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- - Narrowband and broadband highperformance amplifiers SAT uplink transmitters PCS/Cellular low-voltage high-efficiency output amplifiers Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS1:
PARAMETER
Power at 1d B Gain pression Maximum Stable Gain...
