Datasheet Details
| Part number | FPD10000AF |
|---|---|
| Manufacturer | Filtronic |
| File Size | 189.32 KB |
| Description | 10W PACKAGED POWER PHEMT |
| Download | FPD10000AF Download (PDF) |
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| Part number | FPD10000AF |
|---|---|
| Manufacturer | Filtronic |
| File Size | 189.32 KB |
| Description | 10W PACKAGED POWER PHEMT |
| Download | FPD10000AF Download (PDF) |
|
|
|
AND APPLICATIONS FPD10000AF 10W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE • The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band.
The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking.
Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.
PRELIMINARY • PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.
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