FPD1050 Overview
AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications.
FPD1050 Key Features
- 28.5 dBm Linear Output Power at 12 GHz
- 11 dB Power Gain at 12 GHz
- 14 dB Maximum Stable Gain at 12 GHz
- 41 dBm Output IP3
- 45% Power-Added Efficiency
- DESCRIPTION AND