FPD1000AS Datasheet | Filtronic

DESCRIPTION AND APPLICATIONS SEE PACKAGE OUTLINE FOR MARKING CODE - The FPD1000AS is a packaged depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. - ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1d B Gain pression Power Gain at d B Gain pression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1d B Gain pression 3 -Order Intermodulation Distortion ΓS and ΓL tuned for Optimum IP3 Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case) Phone: +1 408 850-5790 Fax: +1 408 850-5766 rd Symbol P1d B G1d B MSG PAE IM3 Test Conditions VDS = 10V; IDS = 200 m A ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 m A ΓS and ΓL tuned for Optimum IP3 VDS = 10 V; IDS = 200m A PIN = 0d Bm, 50Ω system VDS = 10V; IDS = 200 m A ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 m A POUT = 19 d Bm (single-tone level) Min 30 13.5 Typ 31 15.0 20 50 Max Units d Bm RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL d B % -46 480 650 1100 720 20 0.7 6 20 0.9 8 22 25 50 1.4 800 d Bc m A m A m S µA V V V °C/W IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| ΘCC VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 2.4 m A IGS = 2.4 m A IGD = 2.4 m A See Note on following page http:// .filtronic.co.uk/semis Revised: 05/26/05 Email: sales@filcsi. 1W PACKAGED POWER PHEMT - REMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS ABSOLUTE MAXIMUM RATINGS1 Parameter Drain-Source Voltage Gate-Source Voltage...