Filtronic FPD1000AS
The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics.| Part No. | FPD1000AS |
|---|---|
| Datasheet | FPD1000AS Download |
| Manufacturer |  Filtronic |
| Description | 1W PACKAGED POWER PHEMT |
| Buy | Stock & Price |
DESCRIPTION
ANDAPPLICATIONS
SEE PACKAGE OUTLINE FOR MARKING CODE● Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.
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ELECTRICAL SPECIFICATIONS
AT 22°C Parameter Power at 1dB Gain Compression Power Gain at dB Gain Compression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1dB Gain Compression 3 -Order Intermodulation Distortion ΓS and ΓL tuned for Optimum IP3 Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case) Phone: +1 408 850-5790 Fax: +1 408 850-5766 rd Symbol P1dB G1dB MSG PAE IM3 Test Conditions VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDS = 200 mA ΓS and ΓL tuned for Optimum IP3 VDS = 10 V; IDS = 200mA PIN = 0dBm, 50Ω system VDS = 10V; IDS = 200 mA ΓS and ΓL tuned f...
