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FPD1000AS - 1W PACKAGED POWER PHEMT

General Description

AND APPLICATIONS SEE PACKAGE OUTLINE FOR MARKING CODE

The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band.

The surface-mount package has been optimized for low parasitics.

Key Features

  • 00, tol. +0.25pF Capacitor, 5.6 pF, 0603, ATC 600, tol. +0.25pF Deleted Capacitor, 33 pF, 0603, ATC 600, tol. +5% Capacitor,.

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Datasheet Details

Part number FPD1000AS
Manufacturer Filtronic
File Size 536.55 KB
Description 1W PACKAGED POWER PHEMT
Datasheet download datasheet FPD1000AS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FPD1000AS 1W PACKAGED POWER PHEMT • PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Suitable for applications to 5 GHz DESCRIPTION AND APPLICATIONS SEE PACKAGE OUTLINE FOR MARKING CODE • The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount package has been optimized for low parasitics. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.