FPD1000V Description
AND APPLICATIONS DIE SIZE (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.
FPD1000V Key Features
- 31 dBm Linear Output Power
- 16 dB Power Gain
- Useable Gain to 10 GHz
- 41 dBm Output IP3
- Maximum Stable Gain of 20 dB
- 50% Power-Added Efficiency
- 10V Operation / Plated Source Thru-Vias
- DESCRIPTION AND