FPD1000V - 1W POWER PHEMT

Product Overview

Filtronic

Datasheet Details

Part number	FPD1000V
Manufacturer	Filtronic
File Size	200.99 KB
Description	1W POWER PHEMT
Datasheet	FPD1000V Datasheet
Additional preview pages of the FPD1000V datasheet.

FPD1000V Product details

Description

The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.

Features

S (1.8 GHz).
31 dBm Linear Output Power.
16 dB Power Gain.
Useable Gain to 10 GHz.
41 dBm Output IP3.
Maximum Stable Gain of 20 dB.
50% Power-Added Efficiency.
10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER PHEMT GATE BOND PAD (2X).

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Published: May 11, 2007 |