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FPD1000V Datasheet 1w Power Phemt

Manufacturer: Filtronic

Overview: PRELIMINARY •.

Datasheet Details

Part number FPD1000V
Manufacturer Filtronic
File Size 200.99 KB
Description 1W POWER PHEMT
Datasheet FPD1000V_Filtronic.pdf

General Description

AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.

The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers.

Key Features

  • S (1.8 GHz).
  • 31 dBm Linear Output Power.
  • 16 dB Power Gain.
  • Useable Gain to 10 GHz.
  • 41 dBm Output IP3.
  • Maximum Stable Gain of 20 dB.
  • 50% Power-Added Efficiency.
  • 10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER PHEMT GATE BOND PAD (2X).

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FPD1000V Distributor