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FPD1500DFN - HIGH LINEARITY PACKAGED PHEMTT

General Description

The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.

Key Features

  • (1850MHZ):.
  • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC) Datasheet v2.1.

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Datasheet Details

Part number FPD1500DFN
Manufacturer Filtronic
File Size 269.79 KB
Description HIGH LINEARITY PACKAGED PHEMTT
Datasheet download datasheet FPD1500DFN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FPD1500DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES (1850MHZ): • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC) Datasheet v2.1 PACKAGE: GENERAL DESCRIPTION: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.