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FPD1500SOT89 - HIGH LINEARITY PACKAGED PHEMTT

General Description

AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography.

Key Features

  • 0.0 0. 0. 8 1. 0 2. 0 3. 4. 5. 0 0 0 10 .0 0 0. 2 2 4 GHz 6 0. 1 GHz -10.0 -0.2 -5.0 -4.0 -0.4 0. 6 2. 0.

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Datasheet Details

Part number FPD1500SOT89
Manufacturer Filtronic
File Size 423.87 KB
Description HIGH LINEARITY PACKAGED PHEMTT
Datasheet download datasheet FPD1500SOT89 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT FPD1500SOT89 • PERFORMANCE (1850 MHz) ♦ 27.5 dBm Output Power (P1dB) ♦ 17 dB Small-Signal Gain (SSG) ♦ 1.2 dB Noise Figure ♦ 42 dBm Output IP3 ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Available in Lead Free Finish: FPD1500SOT89E DESCRIPTION AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.