FPD1500SOT89 Datasheet | Filtronic

DESCRIPTION AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels. The FPD1500 is available in die form and in other packages. Typical applications include drivers or output stages in PCS/Cellular base station highintercept-point LNAs, WLL and WLAN systems, and other types of wireless infrastructure systems. - - ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1d B Gain pression Small-Signal Gain Power-Added Efficiency POUT = P1d B Noise Figure Output Third-Order Intercept Point (from 15 to 5 d B below P1d B) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| NF IP3 VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS Matched for best P1d B Matched for best IP3 at 50% IDSS VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 1.5 m A IGS = 1.5 m A IGD = 1.5 m A 0.7 12 12 375 42 465 750 400 1 1.0 16 16 15 1.3 550 m A m A m S μA V V V 38 1.2 40 d Bm 1.5 d B Symbol P1d B SSG PAE Test Conditions VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS Min 26.0 15.5 Typ 27.5 17 50 Max Units d Bm d B % RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://.filtronic.co.uk/semis Revised11/11/05 Email: sales@filcsi. LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT - ABSOLUTE MAXIMUM RATINGS1 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input...