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PRELIMINARY
• PERFORMANCE (1.8 GHz) ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website ♦ Usable Gain to 3.8GHz DESCRIPTION AND APPLICATIONS
FPD10000AF
10W PACKAGED POWER PHEMT
SEE PACKAGE OUTLINE FOR MARKING CODE
•
The FPD10000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking.
FPD10000AF Datasheet
