FPD10000AF Datasheet | Filtronic

DESCRIPTION AND APPLICATIONS 10W PACKAGED POWER PHEMT SEE PACKAGE OUTLINE FOR MARKING CODE - The FPD10000AF is a packaged depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. - ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1d B Gain pression Class B Operation Power Gain at d B Gain pression Maximum Stable Gain: S21/S12 PIN = 0d Bm, 50Ω system Power-Added Efficiency at 1d B Gain pression Adjacent Channel Power Ratio WCDMA BTS Forward (64 channels) 10.15 d B Pk/Avg 0.001% Saturated Drain-Source Current Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case) IDSS IGSO |VP| |VBDGD| ΘCC VDS = 3.0 V; VGS = 0 V VGS = -3 V VDS = 3.0 V; IDS = 19 m A IGD = 19 m A See Note on following page 30 5.2 3 1.1 35 3.5 A m A V V °C/W ACPR PAE G1d B MSG VDS = 12V; IDQ = 180 m A VDS = 12V; IDQ = 300 m A VDS = 12 V; IDQ = 180 m A VDS = 12 V; IDQ = 300 m A VDS = 12V; IDQ = 180 m A IRF (drive-up current) ~ 1.5A VDS = 12V; IDQ = 180 m A Channel power = 30 d Bm -44 d Bc 10 11 16.5 18.0 55 % d B d B Symbol P1d B Test Conditions VDS = 12V; IDQ = 180 m A Min Typ 40 Max Units d Bm RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://.filtronic.co.uk/semis Revised: 12/07/04 Email: sales@filcsi. PRELIMINARY - FPD10000AF 10W PACKAGED POWER PHEMT REMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 10 to 12V Quiescent Current: From 180 (Class B) to 300 m A (Class AB) operation ABSOLUTE MAXIMUM RATINGS1 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power - Symbol VDS VGS IDS IG...