Filtronic FPD10000V
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 mA), to Class A (IDQ = 1.0 – 1.5 A) to deliver optimal linear power over the desired output power range. The FPD10000V is also available in packaged form.| Part No. | FPD10000V |
|---|---|
| Datasheet | FPD10000V Download |
| Manufacturer |  Filtronic |
| Description | 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
| Buy | Stock & Price |
DESCRIPTION
ANDAPPLICATIONS
DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW● The FPD10000V is also available in packaged form.
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ELECTRICAL SPECIFICATIONS
AT 22°C Parameter Power at 1dB Gain Compression CW Single Tone Power Gain at dB Gain Compression CW Single Tone Channel Power with 802.16-2004 2.5% max. EVM Channel Power with 802.16-2004 2.5% max. EVM Power-Added Efficiency 802.16-2004 modulation Saturated Drain-Source Current Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity IDSS IGSO |VP| |VBDGD| ΘCC PCH PCH Eff G1dB Symbol P1dB Test Conditions VDS = 10V; IDQ = 1.0 A ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDQ = 1.0 A Class AB Mode Class AB Mode VDS = 10 V; IDQ = 1.0 A Class B Mode VDS = 8 V; IDQ = 350 mA typ. Class AB Mode Class B Mode VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 19 mA IGD = 19 mA See Note on following page 30 10 20 5.2 3 1.1 35 3.5 A mA V V °C/W % 29.5 3...
