FPD10000V Datasheet | Filtronic

DESCRIPTION AND APPLICATIONS DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW - The FPD10000V is a discrete depletion mode Al Ga As/In Ga As pseudomorphic High Electron Mobility Transistor (p HEMT), optimized for Wi MAX (WMAN) IEEE 802.16 power amplifiers. The device can be biased from Class C (IDQ < 200 m A), to Class A (IDQ = 1.0 - 1.5 A) to deliver optimal linear power over the desired output power range. The FPD10000V is also available in packaged form. - ELECTRICAL SPECIFICATIONS AT 22°C Parameter Power at 1d B Gain pression CW Single Tone Power Gain at d B Gain pression CW Single Tone Channel Power with 802.16-2004 2.5% max. EVM Channel Power with 802.16-2004 2.5% max. EVM Power-Added Efficiency 802.16-2004 modulation Saturated Drain-Source Current Gate-Source Leakage Current Pinch-Off Voltage Gate-Drain Breakdown Voltage Thermal Resistivity IDSS IGSO |VP| |VBDGD| ΘCC PCH PCH Eff G1d B Symbol P1d B Test Conditions VDS = 10V; IDQ = 1.0 A ΓS and ΓL tuned for Optimum IP3 VDS = 10V; IDQ = 1.0 A Class AB Mode Class AB Mode VDS = 10 V; IDQ = 1.0 A Class B Mode VDS = 8 V; IDQ = 350 m A typ. Class AB Mode Class B Mode VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 19 m A IGD = 19 m A See Note on following page 30 10 20 5.2 3 1.1 35 3.5 A m A V V °C/W % 29.5 30 d Bm 31.0 31.5 d Bm 9.5 d B Min Typ 39.5 Max Units d Bm RF SPECIFICATIONS MEASURED AT f = 3.5 GHz Phone: +1 408 850-5790 Fax: +1 408 850-5766 http:/.filtronic.co.uk/semis Revised: 8/5/05 Email: sales@filcsi. PRELIMINARY 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS - REMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 6V to 12V Quiescent Current: From 200m A (Class B) to 1.5A (Class A) ABSOLUTE MAXIMUM RATINGS1 Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power - Symbol VDS VGS IDS IG PIN TCH TSTG PTOT p. 3 2 Test Conditions -3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward or reverse...