FPD10000V Description
AND APPLICATIONS DIE SIZE (µm): 3750 x 750 DIE THICKNESS: >70 x 60 SEE BONDING DIAGRAM BELOW The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.