Description
AND APPLICATIONS
DIE SIZE (µm): 3750 x 750 DIE THICKNESS: 50µm BONDING PADS (µm): >70 x 60 SEE BONDING DIAGRAM BELOW
The FPD10000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for WiMAX (WMAN) IEEE 802.16 power amplifiers.
Features
- Source thru-vias. 16 bonds each side, Gate and Drain. ¾ User must ensure that the die attach material is uniform and free of voiding underneath the die to ensure proper thermal heatsinking. A useful guideline is a 0.001.
- 0.002 in. (0.025.
- 0.050 mm) fillet of die attach material all around the periphery of the die.
- All information and specifications are subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:/www. filtronic. co. uk/semis
Rev.
FPD10000V Datasheet
