FPD7612 - GENERAL PURPOSE PHEMT

Filtronic Compound Semiconductors

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Datasheet Details

Part number	FPD7612
Manufacturer	Filtronic Compound Semiconductors
File Size	315.60 KB
Description	GENERAL PURPOSE PHEMT
Datasheet	FPD7612_FiltronicCompoundSemiconductors.pdf

FPD7612 Product details

Description

The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. Narrowband and broadband highperformance am

Features

20.5 dBm Output Power (P1dB) 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency Datasheet v3.0 LAYOUT:.

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Published: Oct 25, 2008 |