FIR8N60FG - Silicon N-Channel Power MOSFET

First Semiconductor

General Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Key Features

Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package.

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FIR8N60FG silicon n-channel power mosfet by First Semiconductor - Datasheet Preview

Datasheet Details

Part number	FIR8N60FG
Manufacturer	First Semiconductor
File Size	1.59 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	FIR8N60FG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CSD18503KCS www.ti.com SLPS368 – SEPTEMBER 2012 40-V, N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18503KCS 1 FEATURES Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resistance Threshold Voltage TYPICAL VALUE 40 30 4.6 VGS = 4.5V VGS = 10V 1.9 5.4 3.