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MD7IC18120GNR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MD7IC18120GNR1 datasheet PDF. This datasheet also includes the MD7IC18120NR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MD7IC18120NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MD7IC18120N www.DataSheet4U.com Rev.

0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1880 MHz.

This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Key Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operatio.

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