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MD7IC18120NR1 - RF LDMOS Wideband Integrated Power Amplifiers

General Description

10 μF, 50 V Chip Capacitors 0.1 μF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitor 2.2 pF Chip Capacitors 1.5 pF Chip Capacitors 1.0 pF Chip Capacitors 0.5 pF Chip Capacitor 330 μF, 35 V Electrolytic Capacitors 6.8 nH Chip Inductors 2.5 nH, 1 Turn Inductors 50 Ω, 1/8 W Chip Resistor 1000

Key Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operatio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MD7IC18120N www.DataSheet4U.com Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1880 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout = 30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 25.7 25.7 25.8 PAE (%) 36.7 36.3 35.3 Output PAR (dB) 6.9 6.9 6.