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MD7IC18120GNR1 Datasheet Rf Ldmos Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Overview: Freescale Semiconductor Technical Data Document Number: MD7IC18120N .. Rev. 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1880 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ1A = 70 mA, IDQ1B = 160 mA, IDQ2B = 500 mA, VGS2A = 1.7 Vdc, Pout = 30 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 1805 MHz 1840 MHz 1880 MHz Gps (dB) 25.7 25.7 25.8 PAE (%) 36.7 36.3 35.3 Output PAR (dB) 6.9 6.9 6.7 MD7IC18120NR1 MD7IC18120GNR1 1805-1880 MHz, 30 W AVG., 28 V SINGLE W-CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1866-02 TO-270 WBL-16 PLASTIC MD7IC18120NR1 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 140 Watts CW Output Power • Stable into a 5:1 VSWR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Production Tested in a Symmetrical Doherty Configuration.
  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters.
  • On--Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operatio.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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