MD7IC18120GNR1 Description
Freescale Semiconductor Technical Data Document Number: 0, 5/2010 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC18120N/GN wideband integrated circuit is designed with on--chip matching that makes it usable from 1805 to 1880 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
MD7IC18120GNR1 Key Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large--Signal Load--Pull Parameters and mon Source S--Parameters
- On--Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel