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MD7IC2050NR1 - RF LDMOS Wideband Integrated Power Amplifiers

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Production Tested in a Symmetrical Doherty Configuration.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters.
  • On - Chip Matching (50 Ohm Input, DC Blocked).
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Complian.

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MD7IC2050NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MD7IC2050GNR1 RF LDMOS Wideband Integrated Power Amplifiers
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MD7IC2050N Rev. 0, 8/2009 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2050N wideband integrated circuit is designed with on - chip matching that makes it usable from 1750 - 2050 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Doherty Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1A = IDQ1B = 30 mA, IDQ2A = 230 mA, VG2B = 1.4 Vdc, Pout = 10 Watts Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency 2025 MHz Gps (dB) 30.5 PAE (%) 34.7 Output PAR (dB) 8.7 ACPR (dBc) - 37.4 MD7IC2050NR1 MD7IC2050GNR1 MD7IC2050NBR1 1880 - 2100 MHz, 10 W AVG.