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MD7IC21100GNR1 Datasheet RF LDMOS Wideband Integrated Power Amplifiers

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

Download the MD7IC21100GNR1 datasheet PDF. This datasheet also includes the MD7IC21100NR1 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MD7IC21100NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data Document Number: MD7IC21100N Rev.

0, 10/2008 www.DataSheet4U.com RF LDMOS Wideband Integrated Power Amplifiers The MD7IC21100N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz.

This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA.

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S-Parameters.
  • On - Chip Matching (50 Ohm Input, on a per side basis, DC Blocked).
  • Internally Matched for Ease of Use.
  • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1).
  • Integrated ESD Protection.
  • 225°C Capable Plastic Package.
  • RoHS Compliant.

More Datasheets from Freescale Semiconductor (now NXP Semiconductors)

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