MML09211HT1 Description
Freescale Semiconductor Technical Data Document Number: 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier The MML09211H is a single--stage low noise amplifier (LNA) with active bias and high isolation for use in cellular infrastructure applications. It is designed for a range of low noise, high linearity applications such as pico cell, femto cell, tower mounted amplifiers (TMA) and receiver...
MML09211HT1 Key Features
- Ultra Low Noise Figure: 0.52 dB @ 900 MHz
- Frequency: 400--1400 MHz
- Unconditionally Stable over Temperature
- High Reverse Isolation: --35 dB @ 900 MHz
- P1dB: 22 dBm @ 900 MHz
- Small--Signal Gain: 21.3 dB @ 900 MHz (adjustable externally)
- Third Order Output Intercept Point: 32.6 dBm @ 900 MHz
- Single 5 V Supply
- Supply Current: 60 mA
- 50 Ohm Operation (some external matching required)