MRF5S19150HR3 Datasheet RF Power Field Effect Transistors

Manufacturer: Freescale Semiconductor (now NXP Semiconductors)

MRF5S19150HR3 rf power field effect transistors by Freescale Semiconductor (now NXP Semiconductors) - Datasheet Preview

Datasheet Details

Part number	MRF5S19150HR3
Manufacturer	Freescale Semiconductor (now NXP Semiconductors)
File Size	475.71 KB
Description	RF Power Field Effect Transistors
Download	MRF5S19150HR3 Download (PDF)

Overview

Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev.

2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

Key Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 V Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19150HR3 MRF5S19150HSR3 1930- 1990 MHz, 32 W AVG. , 28 V 2 x N - CDMA LA.

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