MRF5S21150HR3 - RF Power Field Effect Transistors

Freescale Semiconductor

MRF5S21150HR3 Datasheet Preview — Preview of MRF5S21150HR3 PDF

Datasheet Details

Part number	MRF5S21150HR3
Manufacturer	Freescale Semiconductor
File Size	408.51 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF5S21150HR3_FreescaleSemiconductor.pdf

MRF5S21150HR3 Product details

Description

22 μF, 35 V Tantalum Capacitor 6.8 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitors 220 nF Chip Capacitors (1812) 10 μF, 35 V Tantalum Capacitors 0.3 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitor, Radial 10 kW, 1/4 W Chip Resistors Part Number TAJE226M035R 100B6R8CW 100B1R8BW 1812Y224KXA 293D1106X9035D 100B0R3BW 13661471 Manufacturer AVX ATC ATC Vishay - Vitramon Vishay - Sprague ATC Philips MRF5S21150HR3 MRF5S21150HSR3 RF Device Data Freescale Semiconductor 3 C1 C5 R1 C9 C10 C11 C1

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Lower Thermal Resistance Package.
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S21150HR3 MRF5S21150HSR3 2110 - 2170 MHz, 33 W AVG. , 28 V 2 x W - CDMA.

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Published: Feb 15, 2007 |